Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 655-658

  Shterengas, L ^a   Belenky, G L ^a   Kim, J G ^b   Martinelli, R U ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LASER ABLATION; LEAKAGE CURRENTS; MONOLAYERS; SEMICONDUCTING GALLIUM COMPOUNDS; SPONTANEOUS EMISSION; THERMAL EXPANSION; THERMIONIC EMISSION; THRESHOLD VOLTAGE; WAVELENGTH DISPERSIVE SPECTROSCOPY;

CLADDING LAYER; LASER EMISSION; NITROGEN CONTENT; ROOM TEMPERATURE;

QUANTUM WELL LASERS;

EID: 2542505550     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/016     Document Type: Article

References (14)

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