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Volumn 3284, Issue , 1998, Pages 268-273

Low-threshold, high-power, high-brightness GaInAsSb/AlGaAsSb quantum-well lasers emitting at 2.05 μm

Author keywords

AlGaAsSb; Auger Recombination; Diode Laser; Gain Calculation; GaInAsSb; GaSb; Mid infrared; Molecular Beam Epitaxy; Quantum Well; Semiconductor Laser; Tapered Laser

Indexed keywords

CURRENT DENSITY; GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032223959     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304462     Document Type: Conference Paper
Times cited : (12)

References (14)
  • 9
    • 0005296254 scopus 로고
    • Ph.D. Thesis, Univ. of Washington
    • (1978)
    • Smith, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.