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Volumn 3284, Issue , 1998, Pages 268-273
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Low-threshold, high-power, high-brightness GaInAsSb/AlGaAsSb quantum-well lasers emitting at 2.05 μm
a a a a a a |
Author keywords
AlGaAsSb; Auger Recombination; Diode Laser; Gain Calculation; GaInAsSb; GaSb; Mid infrared; Molecular Beam Epitaxy; Quantum Well; Semiconductor Laser; Tapered Laser
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Indexed keywords
CURRENT DENSITY;
GAIN MEASUREMENT;
MOLECULAR BEAM EPITAXY;
QUANTUM EFFICIENCY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
AUGER RECOMBINATION;
BROAD-STRIPE LASERS;
INTERNAL LOSS COEFFICIENTS;
QUANTUM WELL LASERS;
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EID: 0032223959
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.304462 Document Type: Conference Paper |
Times cited : (12)
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References (14)
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