Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2016-2018

  Li, W ^a   Heroux J B ^a   Shao, H ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MID-INFRARED LASER DEVICES; VALENCE BAND OFFSETS;

ARSENIC; CURRENT DENSITY; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; STRAIN; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 11144358092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687981     Document Type: Article

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