Temperature dependence of continuous wave threshold current for 2.3-2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers

Applied Physics Letters

Volumn 74, Issue 20, 1999, Pages 2990-2992

  Garbuzov, D ^a   Maiorov, M ^a,b   Lee, H ^a   Khalfin, V ^a   Martinelli, R ^a   Connolly, J ^a  

^a SARNOFF CORPORATION   (United States)

^b GOODRICH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HETEROJUNCTIONS; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

ACTIVE REGIONS; NONRADIATIVE RECOMBINATION PROCESSES;

QUANTUM WELL LASERS;

EID: 0032620389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123989     Document Type: Article

References (5)

1. D. Garbuzov, H. Lee, V. Khalfin, R. Martinelli, R. Menna, and J. C. Connolly, Paper CWL2, CLEO/EUROPE-European Quantum Electronics Conference, Glasgow, Scotland, United Kingdom (1998).
2. D. Garbuzov, H. Lee, V. Khalfin, R. Martinelli, J. C. Connolly, and G. L. Belenky, IEEE Photonics Technol. Lett. (in press).
3. H. K. Choi, G. W. Turner, and S. I. Eglash, IEEE Photonics Technol. Lett. (in press).
4. D. Z. Garbuzov, R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, and S. Y. Narayan, Appl. Phys. Lett. 69, 2006 (1996).
5. J. R. Meyer, C. L. Felix, W. W. Bewley, I. Vurgaftman, E. H. Aifer, L. J. Olafsen, J. R. Lindle, C. A. Hoffman, M.-J. Yang, B. R. Bennet, B. V. Shanabrook, H. Lee, C.-H. Lin, S. S. Pei, and R. H. Miles, Appl. Phys. Lett. 73, 2857 (1998).