GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power

IEEE Photonics Technology Letters

Volumn 10, Issue 7, 1998, Pages 938-940

  Choi, H K ^a,b   Walpole, J N ^a,b   Turner, G W ^a,b   Connors, M K ^a   Missaggia, L J ^a   Manfra, M J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IEEE   (United States)

Author keywords

AlGaAsSb; GaInAsSb; GaSb; Mid infrared; Molecular beam epitaxy; Quantum well; Semiconductor laser; Tapered laser

Indexed keywords

CURRENT DENSITY; ELECTROMAGNETIC WAVE DIFFRACTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

TAPERED LASERS;

QUANTUM WELL LASERS;

EID: 0032121769     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681276     Document Type: Article

References (16)

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