Temperature dependence of threshold current for 1.8 to 2.3 μm (AlGaIn)(AsSb)-based QW diode lasers

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 437-441

  Rattunde, M ^a   Mermelstein, C ^a   Simanowski, S ^a   Schmitz, J ^a   Kiefer, R ^a   Herres, N ^a   Fuchs, F ^a   Walther, M ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT;

BAND GAP ENERGY; GALLIUM INDIUM ARSENIDE ANTIMONIDE; VALENCE BAND OFFSET;

SEMICONDUCTOR LASERS;

EID: 0034424721     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)