Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser

IEEE Photonics Technology Letters

Volumn 16, Issue 2, 2004, Pages 383-385

  Grau, M ^a   Lin, C ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

GaInAsSb; Midinfrared lasers; Quantum well (QW) lasers; Semiconductor lasers

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; EXTRAPOLATION; HEAT SINKS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES; X RAY DIFFRACTION ANALYSIS;

MIDINFRARED LASERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 1442264081     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.823094     Document Type: Article

References (6)

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6. M. Grau, C. Lin, and M.-C. Amann, "Low threshold 2.72 μm GaInAsSb/AlGaAsSb multiple quantum well laser," Electron. Lett., vol. 38, pp. 1678-1679, Dec. 2002.