Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 260-262

  Salhi, A ^a   Rouillard, Y ^a   Perona A ^a   Grech, P ^a   Garcia, M ^b   Sirtori, C ^b  

^a UNIV MONTPELLIER   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL PYROMETER; QUANTUM WELL LASER DIODE; SOLID-SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENT DENSITY; VALVED CRACKING CELL;

CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULES; PYROMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR LASERS;

EID: 1242310587     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/024     Document Type: Article

References (6)

1. Garbuzov D Z, Lee H, Khalfin V, Martinelli R, Connolly J C and Belensky G L 1999 IEEE Photon. Technol. Lett. 11 794
2. Choi H K, Turner G W and Eglash S J 1994 IEEE Photon. Technol. Lett. 6 7
3. Yarekha D A, Glastre G, Pérona A, Rouillard Y, Genty F, Skouri E M, Boissier G, Grech P, Joullié A, Alibert C and Baranov A N 2000 Electron. Lett. 36 537
4. Garbuzov D Z, Martinelli R U, Lee H, Menna R J, Narayan S Y and Connolly J C 1997 Appl. Phys. Lett. 70 2931
5. Rattunde M, Mermelstein C, Schmitz J, Kiefer R, Pletschen W, Walther M and Wagner J 2002 Appl. Phys. Lett. 80 4085
6. Ghiti A, Silver M and O'Reilly E P 1992 J. Appl. Phys. 71 4626