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Applied Physics Letters

Volumn 72, Issue 8, 1998, Pages 876-878

Ultralow-threshold (50A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm

(3) Turner, G W a Choi, H K a Manfra, M J a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CURRENT DENSITY; ELECTRIC LOSSES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; QUANTUM OPTICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE;

ALUMINUM GALLIUM ARSENIC ANTIMONIDE; GALLIUM INDIUM ARSENIC ANTIMONIDE; INTERNAL LOSS COEFFICIENT; THRESHOLD CURRENT DENSITIES;

QUANTUM WELL LASERS;

EID: 0031998190 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120922 Document Type: Article

Times cited : (128)

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