2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

Electronics Letters

Volumn 40, Issue 7, 2004, Pages 424-425

  Salhi, A ^a   Rouillard, Y ^a   Angellier, J ^a   Grech, P ^a   Vicet, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL LATTICES; CURRENT DENSITY; LASER PULSES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL RESONATORS; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; RIDGE WAVEGUIDE LASERS; SOLID SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 2142841008     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040281     Document Type: Article

References (7)

1. Vicet, A., Yarekha, D.A., Pérona, A., Rouillard, Y., Gaillard, S., and Baranov, A.N.: 'Trace gas detection with antimonide-based quantum-well diode lasers', Spectrochimica Acta A., 2002, 58, pp. 2405-2412
2. Choi, H.K., Turner, G.W., and Eglash, S.J.; 'High-power GaInAsSb-AlGaAsSb multiple quantum-well diode lasers emitting at 1.9 μm', IEEE Photonics Technol. Lett., 1994, 6, (1), pp. 7-9
3. Salhi, A., Rouillard, Y., Pérona, A., Grech, P., Garcia, M., and Sirtori, C.: 'Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm', Semicond. Sci. Technol., 2004, 19, pp. 260-262
4. Kim, J.G., Shterengas, L., Martinelli, R.U., and Belenky, G.L.: 'High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers', Appl. Phys. Lett., 2003, 83, (10), pp. 1926-1928
5. Garbuzov, D.Z., Lee, H., Khalfin, V., Martinelli, R., Connolly, J.C., and Belenky, G.L.: '2.3-2.7 μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers', IEEE Photonics Technol. Lett., 1999, 11, (7), pp. 794-796.
6. Garbuzov, D.Z., Martinelli, R.U., Lee, H., York, P.K., Menna, R.J., Connolly, J.C., and Narayan, S.Y.: 'Ultralow-loss broadened waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers', Appl. Phys. Lett., 1996, 69, (14), pp. 2006-2008
7. Garbuzov, D., Maiorov, M., Lee, H., Khalfin, V., Martinelli, R., and Connolly, J.: 'Temperature dependence of continuous wave threshold current for 2.3-2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers', Appl. Phys. Lett., 1999, 74, (20), pp. 2990-2992