10 GHz passively mode-locked external-cavity semiconductor laser with 1.4 W average output power

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Aschwanden, A ^a   Lorenser, D ^a   Unold, H J ^a   Paschotta, R ^a   Gini, E ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BANDWIDTH; ETCHING; GAIN CONTROL; INTERFEROMETERS; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PARAMETRIC OSCILLATORS; OPTIMIZATION; Q SWITCHING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; VACUUM APPLICATIONS;

PASSIVELY MODE-LOCKED MULTIGIGAHERTZ LASERS; STANDING WAVE PATTERNS; VECSEL; VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER;

LASER MODE LOCKING;

EID: 17644413215     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1890485     Document Type: Article

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