Etching of SiO2 in C4 F8 /Ar plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 250-258

  Guo, Wei ^a,b   Sawin, Herbert H ^b  

^a Massachusetts Institute of Technology   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D PROFILE; AR PLASMAS; BEAM SCATTERING; CELL-BASED; ETCHING KINETICS; FLUX CALCULATIONS; GAS PLASMA; ION ENERGIES; ION FLUXES; KINETICS MODELING; KINETICS MODELS; LEAST SQUARES REGRESSION; MASS BALANCE; MODEL COEFFICIENT; MONTE CARLO; MONTE CARLO PROFILE SIMULATORS; MONTE CARLO SIMULATION; NUMERICAL INTEGRATIONS; PLANAR SURFACE; PLASMA CONDITIONS; RATE COEFFICIENTS; RATE EQUATIONS; REACTION SCHEMES; STEADY STATE; STICKING COEFFICIENTS; STICKING PROBABILITY; SURFACE COMPOSITIONS; SURFACE LAYERS; THREE-DIMENSIONAL (3D);

ETCHING; ION BOMBARDMENT; IONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; NUMERICAL METHODS; PLASMAS; SILICON; SILICON COMPOUNDS; SIMULATORS;

THREE DIMENSIONAL;

EID: 77949357068     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3290760     Document Type: Article

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