SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 311-314

  Gogolides, E ^a   Vauvert, P ^a   Courtin, Y ^a   Kokkoris, G ^a,b   Pelle, R ^a   Boudouvis, A ^b   Turban, G ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; PLASMA SIMULATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA;

FLUOROCARBON PLASMAS;

MICROELECTRONIC PROCESSING;

EID: 0033133126     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00091-X     Document Type: Article

References (4)

1. 1. E. Gogolides, Jpn J Appl Phys 36-4B, 2435, 1997
2. 2 E. Gogolides, P. Vauvert, A. Rhallabi, and G. Turban, Microelec. Engng. 41/42(1998),391
3. 3. C. Lee, M.A. Lieberman, J. Vac. Sci. Technol. B 11 (4), 1243-57 (1995)
4. 4. G.S Oehrlein, Y. Zhang, D Vender, O. Joubert, J. Vac. Sci. Technol. A 12(2)(1994),333