Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 208-213

  Shanware, A ^a   Visokay, M R ^a   Chambers, J J ^a   Rotondaro, A L P ^a   Bu, H ^a   Bevan, M J ^a   Khamankar, R ^a   Aur, S ^a   Nicollian, P E ^a   McPherson, J ^a   Colombo, L ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SILICA; THRESHOLD VOLTAGE; TRANSISTORS;

STRESS STABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 0037634587     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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