Large-scale time characterization and analysis of PBTI in HFO 2/metal gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 174-178

  Mitard, J ^a,b,c   Garros, X ^b   Nguyen, L P ^a,b   Leroux, C ^b   Ghibaudo, G ^c   Martin, F ^b   Reimbold, G ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LARGE-SCALE TIME CHARACTERIZATION; STRESS-GENERATED TRAPS;

ELECTRIC PROPERTIES; ELECTRON TRAPS; EXTRAPOLATION; LARGE SCALE SYSTEMS; STRESS MEASUREMENT; THERMAL EFFECTS;

GATES (TRANSISTOR);

EID: 34250751294     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251212     Document Type: Conference Paper

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