Electrical characterization of leaky charge-trapping high-κ MOS devices using pulsed Q-V

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 436-439

  Martens, Koen ^a,b   Rosmeulen, M ^a   Kaczer, B ^a   Groeseneken, G ^a,b   Maes, H E ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Charge trapping; Electrical characterization; High ; MOSFET; Pulsed C V; Pulsed Q V

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; GATE DIELECTRICS; MOSFET DEVICES;

ELECTRICAL CHARACTERIZATION; GATE VOLTAGE; OXIDE CAPACITANCE;

MOS CAPACITORS;

EID: 34247555501     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895431     Document Type: Article

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