Effective work function modification of atomic-layer-deposited-TaN film by capping layer

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Choi, K ^a   Alshareef, H N ^a,b   Wen, H C ^a   Harris, H ^a,c   Luan, H ^a,c   Senzaki, Y ^a   Lysaght, P ^a   Majhi, P ^a,d   Lee, B H ^a,e  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c AMD ^*

^d INTEL CORPORATION   (United States)

^e IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-LAYER-DEPOSITED (ALD)-TAN; CAPPING; EFFECTIVE WORK FUNCTION (EWF); TI INTERDIFFUSION;

NITROGEN; TANTALUM COMPOUNDS; THIN FILMS; TITANIUM;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33746322324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234288     Document Type: Article

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