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Volumn 3, Issue 2, 2010, Pages

Variation of surface potentials of Si-doped AlxGa1-xN (0 < x > 0:87) grown on AlN/sapphire template by metal-organic vapor phase epitaxy

(5) Kubo, Toshiharu a Taketomi, Hiroyuki b Miyake, Hideto b Hiramatsu, Kazumasa b Hashizume, Tamotsu a

a HOKKAIDO UNIVERSITY (Japan)

b MIE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; METAL-ORGANIC VAPOR PHASE EPITAXY; STABILIZATION ENERGY;

ALUMINUM; CRYSTAL GROWTH; ELECTRIC CURRENTS; ELECTRONIC PROPERTIES; FERMI LEVEL; FERMIONS; GALLIUM NITRIDE; SURFACE POTENTIAL; SURFACE PROPERTIES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 76949090160 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.021004 Document Type: Article

Times cited : (7)

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