Chemical and potential bending characteristics of SiNx/AlGaN interfaces prepared by in situ metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Ogawa, Eri ^a   Hashizume, Tamotsu ^a   Nakazawa, Satoshi ^b   Ueda, Tetsuzo ^b   Tanaka, Tsuyoshi ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

AlGaN; In situ; MOCVD; Potential; SiN; Surface; XPS

Indexed keywords

BINDING ENERGY; DEGRADATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BINDING ENERGIES; PLASMA PROCESS;

ALUMINUM COMPOUNDS;

EID: 34547842264     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L590     Document Type: Article

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