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Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2903-2905

Optical properties of MOVPE-grown a-plane GaN and AlGaN

(5) Narukawa, Mitsuhisa a Miyagawa, Reina a Ma, Bei a Miyake, Hideto a Hiramatsu, Kazumasa a

a MIE UNIVERSITY (Japan)

Author keywords

A3. Low pressure metal organic vapor epitaxy; B1. a Plane AlGaN; B1. a Plane GaN; B1. R plane sapphire

Indexed keywords

A-PLANE; A-PLANE GAN; A3. LOW-PRESSURE METAL-ORGANIC VAPOR EPITAXY; ALGAN; B1. A-PLANE ALGAN; B1. A-PLANE GAN; B1. R-PLANE SAPPHIRE; CRYSTALLINE QUALITY; EMISSION PROPERTIES; METAL-ORGANIC; MOVPE; PLANE SAPPHIRE; REACTOR PRESSURES; ROOM TEMPERATURE; X RAY ROCKING CURVE; YELLOW LUMINESCENCE;

CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; GALLIUM ALLOYS; MORPHOLOGY; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM; SURFACE MORPHOLOGY; VAPORS;

GALLIUM NITRIDE;

EID: 65749117013 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.063 Document Type: Article

Times cited : (10)

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