Growth of crack-free AlGaN on selective-area-growth GaN

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4885-4887

  Miyake, H ^a   Masuda, N ^a   Ogawahara, Y ^a   Narukawa, M ^a   Hiramatsu, K ^a   Ezaki, T ^b   Kuwano, N ^b  

^a MIE UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Metal organic vapor phase epitaxy; A1. Selective area growth; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; NITRIDES; PHASE INTERFACES; PROCESS ENGINEERING; SEMICONDUCTING GALLIUM;

A1. METAL-ORGANIC VAPOR-PHASE EPITAXY; A1. SELECTIVE-AREA GROWTH; AL CONTENTS; ALGAN LAYERS; B1. NITRIDES; GAN LAYERS; GROWTH PROCESSES; IN SITU MONITORING; PURE EDGES; THREADING DISLOCATIONS; TRANSMISSION ELECTRON MICROSCOPY MEASUREMENTS;

GALLIUM ALLOYS;

EID: 56249085890     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.028     Document Type: Article

References (8)

1. Ito K., Hiramatsu K., Amano H., and Akasaki I. J. Crystal Growth 104 (1990) 533
2. Kida Y., Shibata T., Naoi H., Miyake H., Hiramatsu K., and Tanaka M. Phys. Status Solidi (a) 194 (2002) 498
3. Ishiga A., Onishi T., Liu Y.H., Haraguchi M., Kuwano N., Shibata T., Tanaka M., Miyake H., and Hiramatsu K. Mater. Res. Soc. Symp. Proc. 831 (2005) E3.11.1
4. Sakai M., Ishikawa H., Egawa T., Jimbo T., Umeno M., Shibata T., Asai K., Sumiya S., Kuraoka Y., Tanaka M., and Oda O. J. Crystal Growth 244 (2002) 6
5. Shibata T., Kida Y., Miyake H., Hiramatsu K., Asai K., Nagai T., Sumiya S., Tanaka M., and Oda O. Mater. Res. Soc. Symp. Proc. 693 (2002) 219
6. Wu X.H., Brown L.M., Kapolnek D., Keller S., Keller B., DenBaars S.P., and Speck J.S. J. Appl. Phys. 83 (1996) 1379
7. Xin Y., Pennycook S.J., Browning N.D., and Nellist P.D. Appl. Phys. Lett. 72 (1998) 2680
8. Chou C.T., Preston A.R., and Steeds J.W. Philos. Mag. A A65 (1992) 863