High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2326-2329

  Nagamatsu, Kentaro ^a   Okada, Narihito ^a   Sugimura, Hiroki ^a   Tsuzuki, Hirotoshi ^a   Mori, Fumiaki ^a   Iida, Kazuyoshi ^a   Bando, Akira ^b   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

^b Showa Denko Materials Co   (Japan)

Author keywords

A3. Metal organic vapor phase epitaxy; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; WAVELENGTH;

EPITAXIAL LATERALLY OVERGROWN; ULTRAVIOLET LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 41449111629     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.152     Document Type: Article

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