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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

30-nm-Gate AlGaN/GaN heterostructure field-effect transistors with a current-gain cutoff frequency of 181 GHz

(3) Higashiwaki, Masataka a Mimura, Takashi a,b Matsui, Toshiaki a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

Catalytic chemical vapor deposition (Cat CVD); Current gain cutoff frequency (fr); GaN; Heterostructure field effect transistor (HFET); Maximum oscillation frequency (fmax); Millimeter wave

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CUTOFF FREQUENCY; GAIN MEASUREMENT; HETEROJUNCTIONS; MILLIMETER WAVES;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); CURRENT-GAIN CUTOFF FREQUENCY; GATE-INSULATING LAYERS; MAXIMUM OSCILLATION FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 34547193872 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L1111 Document Type: Article

Times cited : (62)

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