Influence of growth conditions on Al incorporation to AlxGa1-xN (x>0.4) grown by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 372-374

  Li, Da Bing ^a   Aoki, Masakazu ^a   Katsuno, Takuya ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Shibata, Tomohiko ^b  

^a MIE UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

A1. Growth condition; A3. MOVPE; B1. Al incorporation; B1. AlGaN

Indexed keywords

CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION;

AL INCORPORATION; ENERGY DISPERSIVE X-RAY SPECTROSCOPY (EDX); GROWTH CONDITIONS; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);

SEMICONDUCTOR GROWTH;

EID: 33846410702     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.049     Document Type: Article

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