Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Kyono, Takashi ^a   Hirayama, Hideki ^b   Akita, Katsushi ^a   Nakamura, Takao ^a   Adachi, Masahiro ^c   Ando, Koshi ^c  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVE EMISSION; ELECTRONS; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM ALLOYS; LEAKAGE CURRENTS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS;

CAPACITANCE-VOLTAGE MEASUREMENTS; ELECTRON LEAKAGE CURRENT; EMISSION EFFICIENCY; EPITAXIAL FILMS; RESIDUAL OXYGEN IMPURITY;

LIGHT EMITTING DIODES;

EID: 33745226240     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200749     Document Type: Article

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