Effects of surface oxidation of AlGaN on DC characteristics of AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Tajima, Masafumi ^a   Kotani, Junji ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; OXYGEN; PHOTODEGRADATION; PLASMA DIAGNOSTICS; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN; ALGAN LAYERS; ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT COLLAPSE; CURRENT STABILITIES; DC CHARACTERISTICS; DEEP LEVELS; DEVICE DEGRADATIONS; NATIVE OXIDE LAYERS; NATIVE OXIDES; OXIDE FORMATIONS; OXYGEN INCORPORATIONS; PLASMA OXIDATIONS; SURFACE OXIDATIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

PLASMA STABILITY;

EID: 60849114761     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.020203     Document Type: Article

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