메뉴 건너뛰기




Volumn 103, Issue 2, 2008, Pages

The surface potential of GaN:Si

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONS; ELECTROSTATICS; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE POTENTIAL;

EID: 38849207492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2831004     Document Type: Article
Times cited : (30)

References (25)
  • 5
    • 0000970991 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.362924.
    • V. M. Bermudez, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362924 80, 1190 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 1190
    • Bermudez, V.M.1
  • 8
    • 0035397378 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1371941.
    • G. Koley and M. G. Spencer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1371941 90, 337 (2001).
    • (2001) J. Appl. Phys. , vol.90 , pp. 337
    • Koley, G.1    Spencer, M.G.2
  • 10
    • 0036920883 scopus 로고    scopus 로고
    • PSSBBD 0370-1972 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3. 0.CO;2-0.
    • M. Kocan, A. Rizzi, H. Lüth, S. Keller, and U. K. Mishra, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/1521-3951(200212)234:3<773::AID- PSSB773>3.0.CO;2-0 234, 773 (2002).
    • (2002) Phys. Status Solidi B , vol.234 , pp. 773
    • Kocan, M.1    Rizzi, A.2    Lüth, H.3    Keller, S.4    Mishra, U.K.5
  • 12
    • 33847288166 scopus 로고    scopus 로고
    • JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.11.039.
    • D. Segev and C. G. Van de Walle, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.11.039 300, 199 (2007).
    • (2007) J. Cryst. Growth , vol.300 , pp. 199
    • Segev, D.1    Van De Walle, C.G.2
  • 14
    • 0000884005 scopus 로고    scopus 로고
    • JVTBD9 1071-1023 10.1116/1.590151.
    • C. I. Wu and A. Khan, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.590151 16, 2218 (1998).
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2218
    • Wu, C.I.1    Khan, A.2
  • 23
    • 38849180583 scopus 로고    scopus 로고
    • The specific resistance divided by the thickness w yields a unit for sheet resistance which is . To avoid confusion between resistance R and sheet resistance RS, the latter is written in / (ohms per square).
    • The specific resistance divided by the thickness w yields a unit for sheet resistance which is. To avoid confusion between resistance R and sheet resistance RS, the latter is written in / (ohms per square).
  • 24
    • 38849159573 scopus 로고
    • The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London).
    • P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1992).
    • (1992)
    • Blood, P.1    Orton, J.W.2
  • 25
    • 38849146649 scopus 로고
    • Vorlesungen über Festkörperphysik (Birkhäuser, Basel).
    • G. Busch and H. Schade, Vorlesungen über Festkörperphysik (Birkhäuser, Basel, 1973).
    • (1973)
    • Busch, G.1    Schade, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.