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Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

Charge transport and trapping in InN nanowires investigated by scanning probe microscopy

(3) Liu, Jie a Cai, Zhihua a Koley, Goutam a

a University of South Carolina (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CHARGE TRANSPORT; CURRENT VOLTAGE; DETRAPPING RATE; ELECTRICAL CONDUCTIVITY; HETEROSTRUCTURES; HIGH DENSITY; INN NANOWIRES; NANOJUNCTIONS; PROBE CURRENTS; RECOVERY TRANSIENTS; REVERSE BIAS; SCANNING GATE MICROSCOPY; STRONG CORRELATION; SURFACE BARRIER; TIME CONSTANTS; TYPE II;

ACTIVATION ENERGY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; NANOWIRES; PROBES; SCANNING; SCANNING PROBE MICROSCOPY;

DRAIN CURRENT;

EID: 73849107703 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3273380 Document Type: Article

Times cited : (11)

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