Scanning gate microscopy of InAs nanowires

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Zhou, X ^b   Dayeh, S A ^b   Wang, D ^b   Yu, E T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MODULATION; DRAIN NANOWIRE CONTACTS; SCANNING GATE MICROSCOPY;

BIAS VOLTAGE; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSCONDUCTANCE;

NANOWIRES;

EID: 34250772862     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2746422     Document Type: Article

References (17)

1. L. Samuelson, M. T. Bjork, K. Deppert, M. Larsson, B. J. Ohlsson, N. Paneva, A. I. Persson, N. Skold, C. Thelander, and L. R. Wallenberg, Physica E (Amsterdam) 21, 560 (2004).
2. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, Science 299, 1874 (2003).
3. C. Thelander, T. Martensson, M. T. Bjork, B. J. Ohlsson, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 83, 2052 (2003).
4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2002).
5. F. Qian, S. Gradecak, Y. Li, C. Wen, and C. M. Lieber, Nano Lett. 5, 2287 (2005).
6. X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature (London) 421, 241 (2003).
7. Q. Wang, A. Javey, R. Tu, H. Dai, H. Kim, P. Mclntyre, T. Krishnamohan, and K. Saraswat, Appl. Phys. Lett. 83, 2432 (2003).
8. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature (London) 441, 489 (2006).
9. S. Jin, D. Whang, M. C. McAlpine, R. S. Friedman, Y. Wu, and C. M. Lieber, Nano Lett. 4, 915 (2004).
10. Y. Doh, J. A. van Dam, A. L. Roest, E. P. A. M. Bakkers, L. P. Kouwenhoven, and S. D. Franceschi, Science 309, 272 (2005).
11. S. Dayeh, D. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, Small 3, 326 (2007).
12. M. A. Topinka, B. J. LeRoy, S. E. J. Shaw, E. J. Heller, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard, Science 289, 2323 (2000).
13. A. Bachtold, M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and Paul L. McEuen, Phys. Rev. Lett. 84, 6082 (2000).
14. C. A. Mead and W. G. Spitzer, Phys. Rev. Lett. 10, 471 (1963).
15. Integrated Systems Engineering (ISE), Technology CAD (TCAD) software products, covering processing, device modeling, circuit and systems simulation, up to package simulation.
16. M. Freitag, Y. Zhou, A. T. Johnson, and W. F. Smith, Appl. Phys. Lett. 79, 3326 (2001).
17. X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, Appl. Phys. Lett. 89, 053113 (2006).