Indium nitride: Evidence of electron accumulation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2175-2178

  Veal, T D ^a   Mahboob, I ^a   Piper, L F J ^a   McConville, C F ^a   Lu, Hai ^b   Schaff, W J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ACCUMULATION; ELECTRON PLASMON EXCITATIONS; PHOTOEMISSION SPECTROSCOPY; VALANCE BANDS;

ANNEALING; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; ELECTRONIC PROPERTIES; ENERGY DISSIPATION; FERMI LEVEL; MOLECULAR BEAM EPITAXY; PERMITTIVITY; PHONONS; PHOTOELECTRON SPECTROSCOPY; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION;

INDIUM COMPOUNDS;

EID: 4944253362     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1771672     Document Type: Conference Paper

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