Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Nanotechnology

Volumn 18, Issue 47, 2007, Pages

  Jacobs, B W ^a   Ayres, V M ^a   Stallcup, R E ^b   Hartman, A ^b   Tupta, M A ^c   Baczewski, A D ^a   Crimp, M A ^a   Halpern, J B ^d   He, M ^d   Shaw, H C ^e  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Zyvex Labs   (United States)

^c Keithley Instruments Inc   (United States)

^d HOWARD UNIVERSITY   (United States)

^e NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYERS; BIPHASIC NANOWIRE STRUCTURES; WURTZITE;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PHASE TRANSITIONS;

NANOWIRES;

GALLIUM; GALLIUM NITRIDE; NANOWIRE; UNCLASSIFIED DRUG; ZINC SULFIDE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR; MATERIALS TESTING; NANOCHEMISTRY; NANOTECHNOLOGY; PRIORITY JOURNAL; STRUCTURE ANALYSIS;

EID: 35748957485     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/47/475710     Document Type: Article

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