Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-K dielectrics)

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 1-3

  Ribes, G ^a,b   Bruyere S ^a   Denais, M ^a,c   Roy, D ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; GATES (TRANSISTOR); HYDROGEN BONDS; MATHEMATICAL MODELS; SILICA;

GATE CURRENT DENSITY; GATE OXIDE BREAKDOWN; POWER LAW DEPENDENCE; STRESS POLARIZATION;

MOS DEVICES;

EID: 21644438191     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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