Physical model for the power-law voltage and current acceleration of TDDB

Microelectronics Reliability

Volumn 45, Issue 12, 2005, Pages 1855-1860

  Haggag, A ^a   Liu, N ^a   Menke, D ^a   Moosa, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MATHEMATICAL MODELS; SILICA; THRESHOLD ELEMENTS;

POWER-LAW VOLTAGE; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); ULTRA-THIN GATE OXIDES;

CMOS INTEGRATED CIRCUITS;

EID: 27744593119     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.03.011     Document Type: Article

References (18)

1. P.E. Nicollian, W.R. Hunter, and J.C. Hu Experimental evidence for voltage driven breakdown models in ultra-thin gate oxide Int Reliab Phys Symp 2000 7 15
2. M. Buchanan Scaling the gate dielectric: Materials, integration and reliability IBM J Res Develop 1999 245 264
3. W. McMahon, A. Haggag, and K. Hess Reliability scaling issues for nanoscale devices IEEE Trans Nanotechnol 2003 33 38
4. Ribes G, Bruyere S, Denais M, Monsieur F, Huard V, Roy D, et al. Modeling charge to breakdown using multi-vibrational excitation. Integrated Reliability Workshop, 2004. p. 1-3.
5. D.J. Bude, B.E. Weir, and P.J. Silverman Explanation of stress-induced damage in thin oxides IEEE IEDM Tech Dig 1998 179 182
6. J.H. Stathis Physical and predictive models of ultra-thin oxide reliability in CMOS devices and circuits Int Reliab Phys Symp 2001 132 149
7. E.Y. Wu, A. Vayshenker, E. Nowak, J. Sune, R.P. Vollertsen, and W. Lai Experimental evidence of TBD power-law for voltage dependence of oxide breakdown in ultrathin gate oxides IEEE Trans Electron Dev 2002 2244 2253
8. B. Tuttle, and C. Van De Wall Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon Phys Rev B 1999 12884 12889
9. T.C. Shen, C. Wang, G.C. Abeln, J.R. Tucker, J.W. Lyding, and Ph. Avouris Atomic scale desorption through electronic and vibrational excitation mechanisms Science 1995 1590 1592
10. K. Stokbro, C. Thirstrup, M. Sakurai, U. Quaade, Y.-K. Hu Ben, and F. Perez-Murano STM-induced hydrogen desorption via a hole resonance Phys Rev Lett 1998 2618 2621
11. Y. Xu, D. Ephron, and M.R. Beasley Direct inelastic hopping of electrons through metal-insulator-metal tunnel junctions Phys Rev B 1995 2843 2860
12. 2 system? J Vacuum Sci Technol B 1998 2134 2153
13. K. Okada, and K. Taniguchi Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides Appl Phys Lett 1997 351 353
14. A. Haggag, W. McMahon, K. Hess, K. Change, J. Lee, and J. Lyding High-performance chip reliability from short-time-tests Int Reliab Phys Symp 2001 271 279
15. D. DiMaria Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films J Appl Phys 2001 5015
16. Vollertsen RP, Wu EY. Gate oxide reliability parameters in the range 1.6 nm to 10 nm. Integrated Reliability Workshop, 2003. p. 10-5.
17. Geilenkeuser R, Wieczorek K, Mantei T, Gratsch F, Herrmann L, Weidner JO. Reliability response of plasma nitrided gate dielectrics to physical and electrical CET scaling. International Reliability Workshop, 2004. p. 15-8.
18. M.A. Alam, and R.K. Smith A phenomenological theory of correlated multiple soft breakdown events in ultra-thin gate dielectrics Int Reliab Phys Symp 2003 406 411