Reliability characteristics of La-doped high-k/metal gate nMOSFETs

Journal of Semiconductor Technology and Science

Volumn 9, Issue 3, 2009, Pages 166-173

  Kang, C Y ^a   Choi, R ^b   Lee, B H ^c   Jammy, R ^a  

^a SEMATECH   (United States)

^b Inha University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

La doped high k metal gate nMOSFETs

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LANTHANUM OXIDES; RELIABILITY; THRESHOLD VOLTAGE;

HIGH-K DIELECTRIC STACKS; HIGH-K/METAL GATES; NORMAL OPERATING CONDITIONS; OXIDE GATE DIELECTRICS; POSITIVE BIAS TEMPERATURE INSTABILITIES; RELIABILITY CHARACTERISTICS; THRESHOLD VOLTAGE SHIFTS; TRAPPING EFFICIENCIES;

MOSFET DEVICES;

EID: 70350685962     PISSN: 15981657     EISSN: None     Source Type: Journal    
DOI: 10.5573/JSTS.2009.9.3.166     Document Type: Article

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