Highly manufacturaba 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 13-14

  Song, S C ^a,d   Zhang, Z B ^b   Hussain, M M ^a,d   Huffman, C ^b   Barnett, J ^a,d   Bae, S H ^a,d   Li, H J ^a,d   Majhi, P ^c   Park, C S ^a,d   Ju, B S ^a,d   Park, H K ^f   Kang, C Y ^a,d   Choi, R ^a,d   Zeitzoff, P ^a,d   Tseng, H H ^d   Lee, B H ^e   Jammy, R ^e  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c INTEL CORPORATION   (United States)

^d Freescale Assignee ^*  (United States)

^e IBM   (United States)

^f Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL METAL GATE INTEGRATION; GATE STACK INTEGRATION; LOW STAND-BY POWER (LSTP) NODE; PMOSFET;

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; HIGH TEMPERATURE APPLICATIONS; LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 34249805888     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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