Effects of barrier height (Θ B) and the nature of Bi-layer structure on the reliability of high-k dielectrics with dual metal gate (Ru & Ru-Ta alloy) technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 138-139

  Kim, Y H ^a   Choi, R ^a   Jha, R ^b   Lee, J H ^b   Misra, V ^b   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CRITICAL DEFECT DENSITIES; GATE ELECTRODES; POST-DEPOSITION ANNEALING (PDA);

ALUMINA; BISMUTH; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SILICA; WEIBULL DISTRIBUTION;

HAFNIUM COMPOUNDS;

EID: 4544326573     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Y.H.Kim, et al, IEDM., p 629 (2002)
2. T. Kaueraut,et al, EDL vol 23, p215-217, (2002)
3. Y.H.Kim, et at, EDL, p. 40-42,Jan. (2003)
4. L. Kang.et al, IEDM, p. 35-38, (2000)
5. J.H.Lee,et al, IEDM, p. 359-362 (2002)