Quantitative analysis of contribution of initial traps to breakdown in HfAlOx/SiO2 stacked gate dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 166-167

  Okada, Kenji ^a   Ota, Hiroyuki ^a   Mizubayashi, Wataru ^a   Satake, Hideki ^a   Ogawa, Arito ^a   Iwamoto, Kunihiko ^a   Horikawa, Tsuyoshi ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; SILICA; WEIBULL DISTRIBUTION;

HFALOX/SIO2; INITIAL TRAPS; STACKED GATE DIELECTRICS; TRAP GENERATION RATE;

CHEMICAL ANALYSIS;

EID: 33744796611     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469253     Document Type: Conference Paper

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