Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 536-539

  Abermann, S ^a   Efavi, J ^b   Sjoblom G ^c   Lemme, M ^b   Olsson, J ^c   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b AMO GMBH   (Germany)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; MOLYBDENUM; MOS CAPACITORS; NICKEL; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

GATE STACKS; INTERFACE TRAPPING; OXIDE CHARGING; THERMODYNAMIC INSTABILITY;

GATES (TRANSISTOR);

EID: 34247166249     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.002     Document Type: Article

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