Hot carrier degradation of HfSiON gate dielectrics with TiN electrode

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 2, 2005, Pages 177-182

  Sim, Jang H ^a   Lee, Byoung Hun ^b   Choi, Rino ^c   Song, Seung Chul ^c   Bersuker, Gennadi ^c  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM   (United States)

Author keywords

High dielectrics; Hot carrier stress; Reliability

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON TRAPS; HAFNIUM COMPOUNDS; MOS DEVICES; RELIABILITY; SILICA; SILICON NITRIDE; STRESS ANALYSIS; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

GATE DIELECTRICS; HIGH-K DIELECTRICS; HOT CARRIER DEGRADATION; HOT CARRIER RELIABILITY; HOT CARRIER STRESS;

GATES (TRANSISTOR);

EID: 23844451438     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.851211     Document Type: Conference Paper

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