Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors

IEEE Transactions on Nanotechnology

Volumn 5, Issue 3, 2006, Pages 278-283

  Ahn, Chiyui ^a   Shin, Mincheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Nano field effect transistor (FET); Nonequilibrium Green's function (NEGF); Quantum transport; Schottky barrier tunnel transistor

Indexed keywords

NANO FIELD-EFFECT TRANSISTOR (FET); NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); QUANTUM TRANSPORT; SCHOTTKY-BARRIER TUNNEL TRANSISTOR;

ALGORITHMS; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; POISSON DISTRIBUTION; QUANTUM EFFICIENCY;

SCHOTTKY BARRIER DIODES;

EID: 33646719326     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.874042     Document Type: Conference Paper

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