Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1167-1170

  Tan, Eu Jin ^a,b,c   Pey, Kin Leong ^a   Singh, Navab ^b   Lo, Guo Qiang ^b   Chi, Dong Zhi ^c   Chin, Yoke King ^a,b   Hoe, Keat Mun ^b   Cui, Guangda ^a   Lee, Pooi See ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Erbium silicide; Schottky source drain (S D) MOSFET (SSDMOS); Silicon nanowire (SiNW)

Indexed keywords

ELECTRIC WIRE; ERBIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SUGAR (SUCROSE);

DISILICIDE; ERBIUM SILICIDE; N-MOSFETS; NMOS TRANSISTORS; SCHOTTKY BARRIER; SCHOTTKY SOURCE/DRAIN (S/D) MOSFET (SSDMOS); SILICON NANOWIRE (SINW); SILICON-NANOWIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849361900     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004508     Document Type: Article

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