Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 733-736

  Ieong, MeiKei ^a   Solomon, Paul M ^a   Laux, S E ^a   Wong, Hon Sum Philip ^a   Chidambarrao, Dureseti ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES;

FINITE SCHOTTKY BARRIER HEIGHT; PHYSICAL CONTACT TUNNELING MODELS;

MOSFET DEVICES;

EID: 0032257711     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)