Unified simulation of Schottky and Ohmic contacts

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 103-108

  Matsuzawa, Kazuya ^a   Uchida, Ken ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON EMISSION; INTERFACES (MATERIALS); METALS; MOSFET DEVICES; NUMERICAL METHODS; OHMIC CONTACTS; OPTICAL VARIABLES MEASUREMENT; ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSISTORS;

METAL SEMICONDUCTOR INTERFACE; OHMIC CONTACT; SCHOTTKY BARRIER TUNNEL TRANSISTORS; SCHOTTKY CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 0033880784     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817574     Document Type: Article

References (17)