50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 670-672

  Ikeda, Keiji ^a   Yamashita, Yoshimi ^a   Endoh, Akira ^a   Fukano, Tetsu ^a   Hikosaka, Kohki ^a   Mimura, Takashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Germano silicide; Heterostructure; MOSFET; Schottky source drain; SiGe; Silicide; Silicon germanium on insulator (SGOI)

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

SCHOTTKY BARRIER-HEIGHT (SBH);

MOSFET DEVICES;

EID: 0036863371     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805007     Document Type: Article

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