Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Semiconductors

Volumn 42, Issue 6, 2008, Pages 689-693

  Belyaev, A E ^a   Boltovets, N S ^b   Ivanov, V N ^b   Klad'ko, V P ^a   Konakova, R V ^a   Kudrik, Ya Ya ^a   Kuchuk, A V ^a   Milenin, V V ^a   Sveshnikov, Yu N ^c   Sheremet, V N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b State Enterprise Scientific Research Institute ORION   (Ukraine)

^c ZAO Élma Malakhit ^*  (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79960638698     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608060092     Document Type: Article

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