Enhancement of Schottky barrier height on p-type GaN by (NH 4)2Sx treatment

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Lin, Yow Jon ^a   You, Chang Feng ^a   Lee, Chi Sen ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); GALLIUM; NITROGEN; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER HEIGHTS; DEFECT BANDS; DEPLETION LAYERS; THERMIONIC FIELD EMISSION (TFE);

SCHOTTKY BARRIER DIODES;

EID: 33645221304     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2175446     Document Type: Article

References (28)

1. M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, and M. Blasingame, Appl. Phys. Lett. 60, 2917 (1992).
2. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, Appl. Phys. Lett. 79, 1417 (2001).
3. M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame, and A. R. Bhattarai, Appl. Phys. Lett. 63, 2455 (1993).
4. M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62, 1786 (1993).
5. N. Biyikli, O. Aytur, I. Kimukin, T. Tut, and E. Ozbay, Appl. Phys. Lett. 81, 3272 (2002).
6. M. A. Khan, A. R. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
7. M. W. Wang, J. O. McCaldin, J. F. Swenberg, T. C. McGill, and R. J. Hauenstein, Appl. Phys. Lett. 66, 1974 (1995).
8. Y. J. Lin, Appl. Phys. Lett. 86, 122109 (2005).
9. Y. J. Lin, Z. L. Wang, and H. C. Chang, Appl. Phys. Lett. 81, 5183 (2002).
10. Y. J. Lin, Y. L. Chu, Y. S. Huang, and H. C. Chang, Appl. Phys. Lett. 86, 202107 (2005).
11. Y. J. Lin, C. D. Tsai, Y. T. Lyu, and C. T. Lee, Appl. Phys. Lett. 77, 687 (2000).
12. J. K. Ho, C. S. Jong, C. N. Huang, C. Y. Chen, C. C. Chiu, and K. K. Shih, Appl. Phys. Lett. 74, 1275 (1999).
13. Michael Shur, Physics of Semiconductor Devices (Pnentice-Hall, Englewood Cliffs, NJ, 1990).
14. H. Morkoç, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
15. C. Merz, M. Kunzer, U. Kaufmann, I. Akasaki, and H. Amano, Sernicond. Sci. Technol. 11, 712 (1996).
16. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
17. J. I. Pankove, S. Bloom, and G. Harbeke, RCA Rev. 36, 163 (1975).
18. H. Nakayama, P. Hacke, M. R. H. Khan, T. Detch-Prohm, K. Hirmatsu, and N. Sawaki, Jpn. J. Appl. Phys., Part 2 35, L282 (1996).
19. J. S. Kwak, O. H. Nam, and Y. Park, Appl. Phys. Lett. 80, 3554 (2002).
20. J. S. Kwak, O. H. Nam, and Y. Park, J. Appl. Phys. 95, 5917 (2004).
21. K. Shiojima, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 77, 4353 (2000).
22. B. L. Sharma, Metal-Semiconductor Schottky Barrier Junctions and Their Applications (Plenum, New York, 1984).
23. H. B. Michaelson, IBM J. Res. Dev. 22, 72 (1978).
24. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 73, 809 (1998).
25. I. Shalish, Y. Shapira, L. Burstein, and J. Salzman, J. Appl. Phys. 89, 390 (2001).
26. M. A. Reshchikov, P. Visconti, and H. Morkoç, Appl. Phys. Lett. 78, 177 (2001).
27. V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).
28. C. I. Wu and A. Kahn, J. Appl. Phys. 86, 3209 (1999).