Mechanism of current leakage through metal/n-GaN interfaces

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 322-325

  Oyama, Susumu ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaN; Leakage current; Schottky; Surface trap; Thermionic field emission; Tunneling

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SURFACE DISCHARGES; THERMIONIC EMISSION;

SURFACE TRAPS;

INTERFACES (MATERIALS);

EID: 0037042089     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00902-3     Document Type: Conference Paper

References (10)