High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Chen, D J ^a   Huang, Y ^a   Liu, B ^a   Xie, Z L ^a   Zhang, R ^a   Zheng, Y D ^a   Wei, Y ^b   Narayanamurti, V ^b  

^a NANJING UNIVERSITY   (China)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT MECHANISMS; FOUR ORDERS; HIGH QUALITIES; INGAN ALLOYS; LOW BACKGROUNDS; PHOTOVOLTAIC DEVICES; RECOMBINATION CURRENTS; REJECTION RATIOS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SPECTRAL RESPONSIVITY; TUNNELING CURRENTS;

BIOACTIVITY; CONCENTRATION (PROCESS); FABRICATION; GALLIUM; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SILICON SOLAR CELLS; THERMIONIC EMISSION;

CARRIER CONCENTRATION;

EID: 63749132816     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3099601     Document Type: Article

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