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Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

Electrochemical growth of n-ZnO onto the p -type GaN substrate: P-n heterojunction characteristics

(4) Asil, H a Gür, Emre a Cinar K a Coskun C a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ABSORPTION MEASUREMENTS; BEFORE AND AFTER; C-AXIS ORIENTATIONS; ELECTROCHEMICAL GROWTH; GROWTH PROCESS; IV CHARACTERISTICS; P-N HETEROJUNCTIONS; P-N JUNCTION; P-TYPE GAN; PHOTOLUMINESCENCE MEASUREMENTS; TURN ON VOLTAGE; X-RAY DIFFRACTION MEASUREMENTS; ZNO; ZNO FILMS; ZNO THIN FILM;

ABSORPTION; ALUMINUM; GALLIUM NITRIDE; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THIN FILMS; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 67649506324 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3157268 Document Type: Article

Times cited : (25)

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