-
1
-
-
21044450529
-
-
0018-9383 10.1109/TED.2005.848082.
-
T. Murata, M. Hikita, Y. Hirose, Y. Uemoto, K. Inoue, T. Tanaka, and D. Ueda, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2005.848082 52, 1042 (2005).
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, pp. 1042
-
-
Murata, T.1
Hikita, M.2
Hirose, Y.3
Uemoto, Y.4
Inoue, K.5
Tanaka, T.6
Ueda, D.7
-
2
-
-
33847714925
-
-
1041-1135 10.1109/LPT.2006.883322.
-
C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, IEEE Photon. Technol. Lett. 1041-1135 10.1109/LPT.2006.883322 18, 2029 (2006).
-
(2006)
IEEE Photon. Technol. Lett.
, vol.18
, pp. 2029
-
-
Lee, C.T.1
Yang, U.Z.2
Lee, C.S.3
Chen, P.S.4
-
3
-
-
33644913959
-
-
0003-6951 10.1063/1.2182067.
-
R. J. Xie, N. Hirosaki, M. Mitomo, K. Takahashi, and K. Sakuma, Appl. Phys. Lett. 0003-6951 10.1063/1.2182067 88, 101104 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 101104
-
-
Xie, R.J.1
Hirosaki, N.2
Mitomo, M.3
Takahashi, K.4
Sakuma, K.5
-
4
-
-
33646698905
-
-
0003-6951 10.1063/1.2195009.
-
D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 0003-6951 10.1063/1.2195009 88, 141918 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 141918
-
-
Rogers, D.J.1
Teherani, F.H.2
Yasan, A.3
Minder, K.4
Kung, P.5
Razeghi, M.6
-
5
-
-
0001044226
-
-
0021-8979 10.1063/1.367484.
-
J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, J. Appl. Phys. 0021-8979 10.1063/1.367484 83, 6148 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 6148
-
-
Carrano, J.C.1
Li, T.2
Grudowski, P.A.3
Eiting, C.J.4
Dupuis, R.D.5
Campbell, J.C.6
-
6
-
-
0345822019
-
-
0003-6951 10.1063/1.1394717.
-
O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, Appl. Phys. Lett. 0003-6951 10.1063/1.1394717 79, 1417 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 1417
-
-
Katz, O.1
Garber, V.2
Meyler, B.3
Bahir, G.4
Salzman, J.5
-
7
-
-
43949106845
-
-
Physics of Semiconductor Devices, 2nd ed. (Wiley, New York).
-
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
-
(1981)
-
-
Sze, S.M.1
-
8
-
-
0001181554
-
-
0021-8979 10.1063/1.363822.
-
J. D. Guo, F. M. Pan, M. S. Feng, R. J. Guo, P. F. Chou, and C. Y. Chang, J. Appl. Phys. 0021-8979 10.1063/1.363822 80, 1623 (1996).
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 1623
-
-
Guo, J.D.1
Pan, F.M.2
Feng, M.S.3
Guo, R.J.4
Chou, P.F.5
Chang, C.Y.6
-
10
-
-
79956034185
-
-
0003-6951 10.1063/1.1430024.
-
K. A. Rickert, A. B. Ellis, F. J. Himpsel, J. Sun, and T. F. Kuech, Appl. Phys. Lett. 0003-6951 10.1063/1.1430024 80, 204 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 204
-
-
Rickert, K.A.1
Ellis, A.B.2
Himpsel, F.J.3
Sun, J.4
Kuech, T.F.5
-
11
-
-
33847753885
-
-
0021-8979 10.1063/1.2427100.
-
P. S. Chen, T. H. Lee, L. W. Lai, and C. T. Lee, J. Appl. Phys. 0021-8979 10.1063/1.2427100 101, 024507 (2007).
-
(2007)
J. Appl. Phys.
, vol.101
, pp. 024507
-
-
Chen, P.S.1
Lee, T.H.2
Lai, L.W.3
Lee, C.T.4
-
12
-
-
0001076210
-
-
0003-6951 10.1063/1.126347.
-
C. T. Lee and H. W. Kao, Appl. Phys. Lett. 0003-6951 10.1063/1.126347 76, 2364 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2364
-
-
Lee, C.T.1
Kao, H.W.2
-
14
-
-
0022028576
-
-
0038-1101 10.1016/0038-1101(85)90002-4.
-
A. Singh, Solid-State Electron. 0038-1101 10.1016/0038-1101(85)90002-4 28, 223 (1985).
-
(1985)
Solid-State Electron.
, vol.28
, pp. 223
-
-
Singh, A.1
-
16
-
-
33749489611
-
-
0003-6951 10.1063/1.2358207.
-
R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, and X. M. Tao, Appl. Phys. Lett. 0003-6951 10.1063/1.2358207 89, 143505 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 143505
-
-
Wang, R.X.1
Xu, S.J.2
Shi, S.L.3
Beling, C.D.4
Fung, S.5
Zhao, D.G.6
Yang, H.7
Tao, X.M.8
-
18
-
-
0000335728
-
-
0031-8949
-
B. Bati, C. Nuhoglu, M. Saglam, E. Ayyildiz, and A. Türüt, Phys. Scr. 61, 209 (2000). 0031-8949
-
(2000)
Phys. Scr.
, vol.61
, pp. 209
-
-
Bati, B.1
Nuhoglu, C.2
Saglam, M.3
Ayyildiz, E.4
Türüt, A.5
-
19
-
-
0005985130
-
-
0021-8979 10.1063/1.371145.
-
S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 10.1063/1.371145 86, 1 (1999).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1
-
-
Pearton, S.J.1
Zolper, J.C.2
Shul, R.J.3
Ren, F.4
-
20
-
-
0038443548
-
-
0741-3106 10.1109/LED.2003.812147.
-
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2003.812147 24, 212 (2003).
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 212
-
-
Chang, S.J.1
Lee, M.L.2
Sheu, J.K.3
Lai, W.C.4
Su, Y.K.5
Chang, C.S.6
Kao, C.J.7
Chi, G.C.8
Tsai, J.M.9
-
21
-
-
0035872509
-
-
0021-4922 10.1143/JJAP.40.L505.
-
H. Jiang, N. Nakata, G. Y. Zhao, H. Ishikawa, C. L. Shao, T. Egawa, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.40.L505 40, L505 (2001).
-
(2001)
Jpn. J. Appl. Phys., Part 2
, vol.40
, pp. 505
-
-
Jiang, H.1
Nakata, N.2
Zhao, G.Y.3
Ishikawa, H.4
Shao, C.L.5
Egawa, T.6
Jimbo, T.7
Umeno, M.8
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