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Volumn 103, Issue 9, 2008, Pages

Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CAPACITANCE MEASUREMENT; CHLORINATION; DARK CURRENTS; GALLIUM NITRIDE; QUANTUM EFFICIENCY; SURFACE TREATMENT;

EID: 43949087224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2913344     Document Type: Article
Times cited : (40)

References (21)
  • 7
    • 43949106845 scopus 로고
    • Physics of Semiconductor Devices, 2nd ed. (Wiley, New York).
    • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
    • (1981)
    • Sze, S.M.1
  • 12
    • 0001076210 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.126347.
    • C. T. Lee and H. W. Kao, Appl. Phys. Lett. 0003-6951 10.1063/1.126347 76, 2364 (2000).
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 2364
    • Lee, C.T.1    Kao, H.W.2
  • 14
    • 0022028576 scopus 로고
    • 0038-1101 10.1016/0038-1101(85)90002-4.
    • A. Singh, Solid-State Electron. 0038-1101 10.1016/0038-1101(85)90002-4 28, 223 (1985).
    • (1985) Solid-State Electron. , vol.28 , pp. 223
    • Singh, A.1
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.